阐述了一种使用便携式四探针电阻检测仪判断多晶硅质量下滑原因的方法。通过检测多晶硅的截面电阻，以多晶硅生长规律为依据，估测发生质量下滑的时间，并用初步判断造成质量下滑原料类别的方式来辅助判定质量下滑原因，为质量恢复期间多晶硅产品品级的判定提供依据。

This paper describes a method for judging the cause of polysilicon quality slide by using a portable four-probe resistance detector.Based on the growth law of polysilicon,the time point that the quality of polysilicon starts to decline is estimated through detecting the cross-sectional resistance of polysilicon.The cause for quality decline of polysilicon is judged under the assistance of preliminarily judging raw material categories that cause the quality of polysilicon to decline.This method can supply a basis to determine the grade of polysilicon products during the quality picking up period.