Please wait a minute...
 
最新公告: 重要提醒:骗子冒充编辑部要求加作者微信,谨防上当!   关于暑假、寒假期间版面费发票及期刊样刊延迟邮寄的通知    
现代化工  2018, Vol. 38 Issue (5): 38-42    DOI: 10.16606/j.cnki.issn0253-4320.2018.05.009
  技术进展 本期目录 | 过刊浏览 | 高级检索 |
改良西门子法制备多晶硅还原过程研究进展
李亚广1,2, 聂陟枫1, 周扬民2,3, 方文宝1, 谢刚3, 侯彦青1
1. 昆明理工大学省部共建复杂有色金属资源清洁利用国家重点实验室, 云南 昆明 650093;
2. 昆明理工大学冶金与能源学院, 云南 昆明 650093;
3. 昆明冶金研究院, 云南 昆明 650093
Research progress in reduction process of polysilicon production by modified Siemens method
LI Ya-guang1,2, NIE Zhi-feng1, ZHOU Yang-min2,3, FANG Wen-bao1, XIE Gang3, HOU Yan-qing1
1. State Key Laboratory for Clean Utilization of Complex Nonferrous Metal Resources, Kunming University of Science and Technology, Kunming 650093, China;
2. Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China;
3. Kunming Metallurgical Research Institute, Kunming 650093, China
下载:  PDF (1918KB) 
输出:  BibTeX | EndNote (RIS)      
摘要 对生产多晶硅的主要生产方法进行了比较,指出改良西门子法、流化床法、冶金法这3种工艺的优点和不足。重点介绍了多晶硅主流生产方法改良西门子法,阐述了改良西门子法生产多晶硅还原过程的反应机理、数值模拟等,并对该工艺目前的研究进展进行了阐述。
服务
把本文推荐给朋友
加入引用管理器
E-mail Alert
RSS
作者相关文章
李亚广
聂陟枫
周扬民
方文宝
谢刚
侯彦青
关键词:  多晶硅  改良西门子法  数值模拟  研究现状    
Abstract: The main polysilicon production methods are compared each other.The advantages and disadvantages of the modified Siemens method,the fluidized bed method and the metallurgical method are pointed out.The research progress and existing problems for the process of the modified Siemens method that is the mainstream polysilicon production method at present are introduced emphatically,mainly from the aspects of reaction mechanism,numerical simulation and process flow,etc.
Key words:  polysilicon    modified Siemens method    numerical simulation    research status
收稿日期:  2017-10-31      修回日期:  2018-03-06           出版日期:  2018-05-20
TQ127.2  
基金资助: 国家自然科学基金项目(21566015);云南省应用基础研究项目(2015FB126)
通讯作者:  侯彦青(1982-),男,博士,副教授,冶金过程仿真模拟研究,通讯联系人,hhouyanqing@163.com。    E-mail:  hhouyanqing@163.com
作者简介:  李亚广(1992-),男,硕士生
引用本文:    
李亚广, 聂陟枫, 周扬民, 方文宝, 谢刚, 侯彦青. 改良西门子法制备多晶硅还原过程研究进展[J]. 现代化工, 2018, 38(5): 38-42.
LI Ya-guang, NIE Zhi-feng, ZHOU Yang-min, FANG Wen-bao, XIE Gang, HOU Yan-qing. Research progress in reduction process of polysilicon production by modified Siemens method. Modern Chemical Industry, 2018, 38(5): 38-42.
链接本文:  
http://www.xdhg.com.cn/CN/10.16606/j.cnki.issn0253-4320.2018.05.009  或          http://www.xdhg.com.cn/CN/Y2018/V38/I5/38
[1] 慈向阳,孔艳杰.中国光伏产业发展态势与规制重构[J].学术交流,2015,(3):137-142.
[2] Green A M.Commercial progress and challenges for photovoltaics[J].Nature Energy,2016,1(1):15015.
[3] Ciszek T F.Photovoltaic materials and crystal growth research and development in the Gigawatt era[J].Journal of Crystal Growth,2014,393(393):2-6.
[4] 谢运,薛汇丽,曾顺军.浅析单晶硅太阳能电池光电转换效率高于多晶硅太阳能电池的原因[J].中国科技投资,2016,(16):188.
[5] 严大洲,李爱民,万烨,等.高纯多晶硅材料行业竞争新格局[J].太阳能,2017,(1):7-15.
[6] 杨素心.用多晶硅标准规范行业发展[J].中国有色金属,2015,(16):44-47.
[7] 刘小锋,王岭.多晶硅化学制备方法的比较分析[J].新材料产业,2011,(6):1336-1340.
[8] Ko K,Song M,Jeon H,et al.Characterization and removal of polysilicon residue during wet etching[J].Microelectronic Engineering,2016,149(5):85-91.
[9] 李超杰,王伟文,张自生.流化床制备多晶硅过程研究进展[J].当代化工,2015,(9):2235-2238.
[10] Iryna B,Oleksandr L,Timur V,et al.Different nucleation approaches for production of high-performance multi-crystalline silicon ingots and solar cells[J].Solar Energy Materials & Solar Cells,2017,159:128-135.
[11] 曹胜军.多晶硅生产工艺现状及改良西门子法工艺流程[J].化工管理,2016,(20):276.
[12] Habuka H,Nagoya T,Mayusumi M,et al.Model on transport phenomena and epitaxial growth of silicon thin film in SiHCl3-H2 system under atmospheric pressure[J].Journal of Crystal Growth,1996,169(1):61-72.
[13] Habuka H,Nagoya T,Masatake M,et al.Modeling of epitaxial silicon thin-film growth on a rotating substrate in a horizontal single-wafer reactor[J].Journal of the Electrochemical Society,1995,142(12):4272-4278.
[14] Hierlemann M,Kersch A,Werner C,et al.A gas-phase and surface kinetics model for silicon epitaxial growth with SiH[sub 2] Cl[sub 2] in an RTCVD reactor[J].Journal of the Electrochemical Society,1995,142(1):259-266.
[15] Kommu S,Wilson G M,Khomami B.A theoretical/experimental study of silicon epitaxy in horizontal Single-wafer chemical vapor deposition reactors[J].Journal of the Electrochemical Society,2000,147(4):153821550.
[16] Balakrishna A,Chacin J M,Comita P B,et al.Chemical kinetics for modeling silicon epitaxy from chlorosilanes[R].Sandia National Laboratories,Albuquerque,NM,and Livermore,CA,1998.
[17] Cavallotti C,Maurizio M.Epitaxial growth theory:Vapor-phase and surface chemistry[J].Silicon Epitaxy,2015,72:51-88.
[18] Ravasio S,Masi M,Cavallotti C.Analysis of the gas phase reactivity of chlorosilanes[J].The Journal of Physical Chemistry A,2013,117(25):5221-5231.
[19] Habuka H,Katayama M,Shimada M,et al.Numerical evaluation of silicon-thin film growth from SiHCl3-H2 gas mixture in a horizontal chemical vapor deposition reactor[J].Japanese Journal of Applied Physics:Part 1,1994,33(4A):1977-1985.
[20] Coso G D,Tobías I,Cañizo C D,et al.Temperature homogeneity of polysilicon rods in a Siemens reactor[J].Journal of Crystal Growth,2007,299(1):165-170.
[21] Coso G D.Chemical decomposition of silanes for the production of solar grade silicon[D].Spain:Universidad Politécnica de Madrid,2010.
[22] Coso G D,Cañizo C D,Luque A.Radiative energy loss in a polysilicon CVD reactor[J].Solar Energy Materials and Solar Cells,2011,95(4):1042-1049.
[23] Ramos A,Cañizo C D,Valdehita J,et al.Radiation heat savings in polysilicon production:Validation of results through a CVD laboratory prototype[J].Journal of Crystal Growth,2013,374(13):5-10.
[24] Ramos A,Cañizo C D,Valdehita J,et al.On track for solar grade silicon through a siemens process-type laboratory reactor:Operating condiations and energy savings[A].Silicon for the Chemical and Solar Industry Ⅻ Conference[C].Kristiansand,Norway,2012.
[25] Ramos A,Rodríguez A,Cañizo C D.et al.Heat losses in a CVD reactor for polysilicon production:Comprehensive model and experimental validation[J].Journal of Crystal Growth,2014,402(18):138-146.
[26] 黄国强,王乃治,潘金华.钟罩式硅烷反应器内流动与传热的数值模拟[J].人工晶体学报,2014,(3):619-624.
[27] 张攀,王伟文,范军领,等.三维还原炉内多晶硅化学气相沉积的数值模拟[J].太阳能学报,2012,33(3):511-516.
[28] Ni H Y,Chen C X.Computational results show gas phase reactions have great impact on the deposition rate of silicon in Siemens CVD reactors[J].Advanced Materials Research,2015,1104:39-44.
[29] 侯彦青.改良西门子法制备多晶硅过程的理论分析及建模[D].昆明:昆明理工大学,2013.
[1] 郭斌, 王红红, 边永欢, 张轩. 蓄热式氧化器处理挥发性有机物的数值模拟技术及应用进展[J]. 现代化工, 2018, 38(7): 44-47,49.
[2] 朱桂华, 王建业, 徐洪威, 柳颖娇, 巴赛, 彭南辉. 外热式蒸压转炉内部结构对脱硫石膏传热效果的仿真[J]. 现代化工, 2018, 38(2): 210-214.
[3] 李如冰, 吴玉锋, 章启军, 陈希, 刘彬. 关于商用SCR(V2O5-WO3/TiO2)催化剂的再生和回收研究概述[J]. 现代化工, 2017, 37(3): 29-33.
[4] 周三平, 谷平. 基于CFD数值模拟的外取热器管束爆裂原因分析[J]. 现代化工, 2017, 37(3): 196-198,200.
[5] 杨春和, 李贤. 氨法烟气脱硫制亚硫酸氢铵过程模拟优化[J]. 现代化工, 2017, 37(3): 199-202.
[6] 贾曦, 方旭升, 罗旭峰, 浦晓东. 改良西门子法生产多晶硅的还原工艺研究[J]. 现代化工, 2017, 37(12): 175-177.
[7] 陈浩, 吕斌, 付来强, 吴文科. 水力旋流器对海底天然气水合物混合浆体分离提纯[J]. 现代化工, 2017, 37(1): 155-159.
[8] 胡小冬, 贾曦, 张东, 黎展荣, 蒲晓东. 多晶硅生产SiHCl3精馏工艺改造[J]. 现代化工, 2016, 36(8): 174-177.
[9] 胡小冬, 王丽, 张东, 贾曦, 王恒孝. 多晶硅生产中废气处理工艺改造[J]. 现代化工, 2016, 36(12): 121-123.
[10] 李伟, 朱曼利, 洪厚胜. 机械蒸汽再压缩技术(MVR)研究现状[J]. 现代化工, 2016, 36(11): 28-31.
[11] 黄洲, 周明, 王刚, 丁申影. 液态CO2增稠剂的研究现状[J]. 现代化工, 2016, 36(10): 25-28.
[12] 王世栋, 潘一, 李沼萱, 杨双春. 非常规压裂液体系研究进展[J]. 现代化工, 2016, 36(10): 38-41,43.
[13] 秦芳玲, 樊月, 白海涛. 微生物采油技术的研究进展[J]. 现代化工, 2016, 36(1): 49-52,54.
[14] 李嘉, 焦玉娟, 周正扬, 高肖汉, 吕雪川, 范志平. 多晶硅薄膜材料制备技术研究进展[J]. 现代化工, 2015, 35(5): 25-29.
[15] 姜海明, 曹忠, 刘淑萍. 多晶硅还原炉硅棒直径检测及生长过程研究[J]. 现代化工, 2015, 35(3): 169-170,172.
[1] . [J]. Modern Chemical Industry, 2015, 35(11): 77 -80 .
[2] . [J]. Modern Chemical Industry, 2015, 35(12): 128 -130,132 .
[3] . [J]. Modern Chemical Industry, 2017, 37(6): 103 -0106,108 .
[4] . [J]. , 2003, 23(5): 0 .
[5] . [J]. , 2009, 29(6): 0 .
[6] . [J]. , 2010, 30(3): 0 .
[7] . [J]. , 2010, 30(7): 0 .
[8] . [J]. , 2007, 27(2): 0 .
[9] . [J]. Modern Chemical Industry, 2014, 34(2): 131 -133 .
[10] . [J]. Modern Chemical Industry, 2014, 34(4): 14 -16 .
Viewed
Full text


Abstract

Cited

  Shared   
  Discussed   
京ICP备09035943号-37
版权所有 © 《现代化工》编辑部
本系统由北京玛格泰克科技发展有限公司设计开发 技术支持:support@magtech.com.cn