针对氧化亚硅（SiO）负极材料充放电过程中体积膨胀较大、容量衰减较快的问题，采用米粉作为碳源对SiO进行包覆改性。XRD测试结果表明，SiO和糯米粉包覆改性材料SiO-NM均没有显著的特征峰，为非晶体结构。SiO的首次放电比容量为1 980.6 mA·h/g，首次充电比容量为891.2 mA·h/g，首次充放电效率为45.0%；糯米粉包覆改性材料SiO-NM的首次放电比容量为942.9 mA·h/g，首次充电比容量为490.4 mA·h/g，首次充放电效率为52.0%，首次充放电效率显著提升。交流阻抗测试结果表明，SiO-NM的电荷转移阻抗R_ct为213.7 Ω，显著小于Si的465.4 Ω，表明材料的导电性能得到提高。

Silicon oxide (SiO) anode material has been extensively studied due to its theoretical specific capacity as high as 2, 680 mAh·g^-1, but its volume expansion during the charging and discharging process is large, and its capacity decays quickly.Different kinds of rice flour are used as carbon sources to coat and modify SiO.XRD test shows that neither SiO nor glutinous rice flour coated material (SiO-NM) has significant characteristic peaks, and they have an amorphous structure.The first discharge specific capacity of SiO is 1, 980.6 mAh·g^-1, the first charge specific capacity is 891.2 mAh·g^-1, and the first charge-discharge efficiency is 45.0%.SiO-NM has a first discharge specific capacity of 942.9 mAh·g^-1, a first charge specific capacity of 490.4 mAh·g^-1, and a first charge-discharge efficiency of 52.0%, showing a significant improvement.AC impedance test shows that the charge transfer resistance R_ct of SiO-NM is 213.7 Ω, which is significantly smaller than the 465.4 Ω of SiO, indicating an improved electrical conductivity.

张倩(1982-),女,博士,讲师,主要研究方向为无机材料的制备与表征分析,623085836@qq.com。