采用铌钨氧化物（NWO）对SiO进行掺杂改性，并与用五氧化二铌（NO）、钛酸锂（LTO）、钛铌氧化物（TNO）改性的材料进行对比研究，分别记为SiO@NWO、SiO@NO、SiO@LTO、SiO@TNO。利用X射线衍射仪对改性后的材料进行测试。结果表明，SiO的首次放电比容量为1 980.6 mA·h/g，充电比容量为891.2 mA·h/g，充放电效率为45.0%；SiO@NWO的首次放电比容量为464.0 mA·h/g，充电比容量为327.1 mA·h/g，充放电效率为70.5%，首次充放电效率显著提升。交流阻抗测试结果表明，SiO@NWO的电荷转移阻抗R_ct为113.5 Ω，显著小于SiO的213.7 Ω，表明材料的导电性能得到提高。

Niobium tungsten oxide (NWO) is used to dope SiO, and niobium pentoxide (NO), lithium titanate (LTO) and titanium niobium oxide (TNO) are used as comparative studies, which are denoted as SiO@NWO, SiO@NO, SiO@LTO, SiO@TNO.The modified materials are tested by X-ray diffractometer.The results show that the first discharge specific capacity of SiO is 1 980.6 mAh·g^-1, the charge specific capacity is 891.2 mAh·g^-1, and the charge and discharge efficiency is 45.0%.The first discharge specific capacity of SiO@NWO is 464.0 mAh·g^-1, the charge specific capacity is 327.1 mAh·g^-1, and the charging and discharging efficiency is 70.5%, showing a significant improvement.AC impedance test results show that the charge transfer resistance Rct of SiO@NWO is 113.5 Ω, which is significantly smaller than the 213.7 Ω of SiO, indicating an improved electrical conductivity.

张继伟(1984-),男,博士,讲师,主要研究方向为资源回收与利用,Jwzhang@haue.edu.cn。