通过石墨相氮化碳（g-C₃N₄）负载磷钨酸（HPW）制备一系列催化剂xHg-C₃N₄。并利用FT-IR、XRD、SEM、UV-Vis、PL光谱对催化剂进行表征。结果显示，负载磷钨酸（HPW）并未改变石墨相氮化碳（g-C₃N₄）的结构，且能有效降低光生电子空穴的复合几率及带隙能。通过光照下固氮反应对催化剂的反应活性进行考察。结果表明，当负载磷钨酸（HPW）质量分数为1.5%时达到最佳的催化活性，在1 h光照下产铵离子率为6.7 mg/（L·h），是g-C₃N₄的20.9倍。

A series of xHg-C₃N₄ catalysts are prepared through loading phosphotungstic acid (HPW) by graphite-phase carbon nitride (g-C₃N₄), and characterized by means of FT-IR spectra, XRD, SEM, UV-Vis, PL spectra. The results show that the loading of phosphotungstic acid (HPW) does not change the structure of graphite-phase g-C₃N₄, and can effectively reduce the recombination probability of photogenerated electron holes and the band gap energy. The reaction activity of the catalysts is evaluated through catalyzing nitrogen fixation reaction under light. Results show that the catalyst has the optimal activity when the loading amount of phosphorotungstate is 1.5%. The yield of ammonium ion over the optimal catalyst can reach 6.7 mg/(L·h) after 1 h of illumination, which is 20.9 times that over g-C₃N₄.