现代化工

现代化工 ›› 2019, Vol. 39 ›› Issue (12) : 191-195. DOI: 10.16606/j.cnki.issn0253-4320.2019.12.040

科研与开发

原子层沉积技术选择性修饰Mo/HZSM-5对甲烷无氧芳构化反应的影响

陈长胜, 张斌, 覃勇

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Selective modification of Mo/HZSM-5 by atomic layer deposition and effects on methane dehydroaromatizatioin

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Received		Published
2019-02-02		2019-12-20
Issue Date	Revised Date
2019-12-14	2019-02-02

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摘要

利用原子层沉积（ALD）技术选择性沉积SiO₂于Mo/HZSM-5催化剂外表面，制备一系列硅修饰的Mo/HZSM-5催化剂，并考察其催化甲烷无氧芳构化反应的性能。通过XRD、NH₃-TPD、BET、XPS、TEM等表征手段对其进行表征，结果发现，ALD沉积二氧化硅于Mo/HZSM-5后，SiO₂主要沉积于催化剂外表面，催化剂中强酸含量下降，提高了催化剂催化甲烷无氧芳构化性能。

Abstract

Atomic layer deposition (ALD) technique is used to deposit SiO₂ selectively onto the external surface of Mo/HZSM-5 to prepare a series of SiO₂-modified Mo/HZSM-5 catalysts.The performances of prepared Mo/HZSM-5 catalysts are evaluated through methane dehydroaromatizatioin.By means of XRD,NH₃-TPD,BET,XPS,TEM and other characterization measures,it is found that SiO₂ is mainly deposited on the external surface of the catalyst,and the content of strong acid in the catalyst decreases,thus improving the catalyst's performance in methane dehydroaromatizatioin.