在FTO导电玻璃上采用磁控溅射法和阳极氧化法制备高度透明TiO₂纳米管（TNT）阵列薄膜，然后溅射沉积Pt纳米粒子，退火后获得半透明负载Pt的TiO₂纳米管阵列薄膜（TNT-Pt）。通过扫描电子显微镜、X射线衍射、X射线光电子能谱对薄膜的微观形貌和组成成分进行表征，证实了TNT-Pt薄膜中Pt纳米粒子的存在。测试结果表明，相对于纯TNT阵列薄膜，TNT-Pt薄膜的光吸收边缘明显发生红移，可见光照射下的光电转换效率提高到35倍。此外，鉴于薄膜的半透明性，TNT-Pt薄膜的正面和反面在可见光照射下均进行了光电流测试，薄膜表现出非对称性光电性能，即反面照射时的光电性能明显优于正面照射。

Highly transparent TiO₂ nanotubes (TNT) array film is fabricated through the magnetron sputtering and anodization methods on the FTO glass.Then Pt nanoparticles are deposited on the surface of the as-prepared TNT film by sputtering.After annealing,a semi-transparent Pt-loading TiO₂ nanotubes array (TNT-Pt) film is attained.Field emission scanning electron microscopy,X-ray diffraction,and X-ray photoelectron spectroscopy are used to characterize the microstructure and composition of the film,which reveals that Pt nanoparticles exist in the TNT-Pt film.Through performance tests,it is found that in comparison with pure TNT array film,the light absorption edge of TNT-Pt film shows significant redshift and the photoelectric conversion efficiency increases to 35 times under visible light irradiation.Moreover,the photocurrent tests are carried out on the front and back sides of TNT-Pt films under visible light irradiation owing to their semitransparency.It is found that the film exhibits asymmetric photoelectric properties,that is,the photoelectric property with back-side illumination is obviously superior to front-side illumination.