通过微波溶剂热法合成宽禁带ZnGa₂O₄纳米光催化剂，并利用X射线衍射仪（XRD）、氮气吸脱附仪、紫外-可见漫反射仪（UV-Vis DRS）、透射电镜（TEM）、X射线光电子能谱（XPS）、电子顺磁共振谱仪（ESR）等技术系统表征了不同制备条件对样品物相和微观形貌、比表面积和孔结构、光吸收性能和光催化活性物种等结构和性质的影响。同时，比较了TiO₂和ZnGa₂O₄纳米颗粒在光催化氧化As（Ⅲ）中的性能差异。结果表明，在紫外光照射下，微波溶剂热法制备的ZnGa₂O₄纳米颗粒具有良好的As（Ⅲ）的光催化氧化能力（40 min可达99.1%），相比于TiO₂光催化剂（84.5%）有很大提高。此外，通过对ZnGa₂O₄纳米光催化剂氧化去除As（Ⅲ）光催化机理的初步探索发现，超氧自由基（O₂^-·）和空穴（h_vb⁺）是此过程中起主要作用的中间反应活性物种。

ZnGa₂O₄ nanocrystallines are synthesized via a microwave solvothermal method.The as-synthesized ZnGa₂O₄ samples are characterized by X-ray diffraction (XRD),N₂ sorption-desorption,UV-Vis diffuse reflectance spectroscopy (UV-Vis DRS),transmission electron microscopy (TEM),electron spin resonance (ESR),X-ray photoelectron spectra (XPS) and electrochemistry technology.It is found that under ultraviolet light irradiation,ZnGa₂O₄ sample prepared by microwave solvothermal method exhibits a higher photocatalytic activity (achieving 99.1% in 40 min) than that of the TiO₂ sample (achieving 84.5% in 40 min) in the oxidization of arsenate (As₂O₃)^3-.Moreover,the active species (O₂^-·) and cavity (h_vb⁺) are recognized as the primary active species responsible for As(Ⅲ) oxidation.A possible mechanism for the photo-oxidation of As(Ⅲ) over ZnGa₂O₄ is also proposed.

田勤奋(1986-),女,硕士,实验师,研究方向为纳米光催化材料,tianqinfen@163.com